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| NTMFS4701N Power MOSFET 30 V, 20 A, Single N-Channel, SOIC-8 Flat Lead Package Features * Thermally and Electrically Enhanced Packaging Compatible with Standard SOIC-8 * New Package Provides Capability of Inspection and Probe After * * * * Board Mounting Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for High Side Control Applications High Speed Switching Capability These are Pb-Free Devices V(BR)DSS 30 V http://onsemi.com RDS(on) Typ 6.0 mW @ 10 V 8.0 mW @ 4.5 V ID Max 20 A Applications * Notebook Computer VCORE Applications * Network Applications * DC-DC Converters MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1 ) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 70C TA = 25C TA = 25C TA = 25C TA = 25C TA = 70C TA = 25C tp = 10 ms PD IDM TJ, Tstg IS EAS ID PD PD ID Symbol VDSS VGS ID Value 30 $20 12.3 9.8 20 2.3 6.0 7.7 6.2 0.9 60 -55 to 150 6.0 280 W A C A mJ A W 1 N-Channel D G Unit V V A S MARKING DIAGRAM & PIN ASSIGNMENT D S S S G D 4701N AYWW G G D SOIC-8 FLAT LEAD CASE 488AA STYLE 1 4701N A Y WW G D = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) Operating and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, IPK = 7.5 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) ORDERING INFORMATION Device Package Shipping NTMFS4701NT1G SOIC-8 FL 1500 / ape & Reel T (Pb-Free) NTMFS4701NT3G SOIC-8 FL 5000 / ape & Reel T (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area 1.127 in sq. [1 oz} including traces). 2. Surface-mounted on FR4 board using minimum recommended pad size (Cu area 0.412 in sq.). (c) Semiconductor Components Industries, LLC, 2007 1 July, 2007 - Rev. 3 Publication Order Number: NTMFS4701N/D NTMFS4701N THERMAL RESISTANCE RATINGS Rating Junction-to-Case - Steady State Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t v10 s (Note 1) Junction-to-Ambient - Steady State (Note 1) Symbol RqJC RqJA RqJA RqJA Value 4.0 140 21 55 Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 7.2 1.0 50 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = $20 V VGS = VDS, ID = 250 mA VGS(TH) VGS(TH)/TJ RDS(on) 1.0 5.0 3.0 V mV/C VGS = 4.5 V, ID = 17 A VGS = 10 V, ID = 20 A 8.0 6.0 70 11 8.0 mW Forward Transconductance gFS VDS = 15 V, ID = 20 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 20 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 1280 500 120 11 1.1 2.0 6.0 1.4 W 15 nC pF SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 6.0 A TJ = 25C TJ = 125C 0.75 0.55 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.0 A 16 18 27 nC ns 1.0 V td(ON) tr td(OFF) tf VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W 9.0 4.0 29 19 ns Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4701N TYPICAL PERFORMANCE CURVES 42 ID, DRAIN CURRENT (AMPS) 36 30 24 18 2.6 V 12 6 2.2 V 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0 VGS = 10 V 6V 4V 3.4 V 42 TJ = 25C 3V ID, DRAIN CURRENT (AMPS) 36 30 24 18 12 6 TJ = 25C TJ = 125C TJ = -55C 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 VDS 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.01 TJ = 125C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.01 Figure 2. Transfer Characteristics TJ = 25C VGS = 4.5 V 0.008 VGS = 10 V 0.006 0.008 0.006 TJ = 25C 0.004 TJ = -55C VGS = 10 V 0 6 24 20 30 ID, DRAIN CURRENT (AMPS) 12 36 42 0.004 0.002 0.002 0 6 12 20 24 30 36 42 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 20 A VGS = 10 V IDSS, LEAKAGE (nA) 1.5 10000 100000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1 1000 TJ = 125C 0.5 0 -50 100 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMFS4701N TYPICAL PERFORMANCE CURVES VGS GATE-TO-SOURCE VOLTAGE (V) , 2500 VDS = 0 V C, CAPACITANCE (pF) 2000 Ciss VGS = 0 V 10 TJ = 25C 8 VGS 1500 Ciss 6 QT 4 QGS 2 0 0 2 4 ID = 20 A TJ = 25C 6 8 10 12 14 16 18 QG, TOTAL GATE CHARGE (nC) 20 22 QGD 1000 Crss 500 0 10 Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) td(off) tf td(on) tr 10 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 8 6 10 4 2 0 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 100 ID, DRAIN CURRENT (AMPS) 10 ms 10 100 ms 1 ms 1 10 ms VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 280 Figure 10. Diode Forward Voltage vs. Current ID = 7.5 A 240 200 160 120 80 40 0 25 50 75 125 100 TJ, STARTING JUNCTION TEMPERATURE (C) 150 dc 0.1 0.01 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTMFS4701N PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X 0.20 C D 2 D1 6 5 A B 0.20 C 4X E1 2 E c 1 2 3 4 q A1 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _ SOLDERING FOOTPRINT* DETAIL A 3X 4X b e/2 1 4 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 1.270 0.750 4X 0.10 0.05 CAB c L 1.000 0.965 1.330 2X K E2 L1 6 5 0.905 4.530 0.475 2X 0.495 M 3.200 G D2 BOTTOM VIEW 4.560 2X 1.530 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P Box 5163, Denver, Colorado 80217 USA .O. Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTMFS4701N/D |
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